200mm Anodized Aluminum Platen Heater for Semiconductor Processing
200mm Anodized Aluminum Platen Heater for Semiconductor Processing
SKU:200-ec329c
Reliable 200mm Anodized Aluminum Platen Heater for precise semiconductor processing. Quick delivery & world-class performance.
Regular price
$1,799.99
Regular price
Sale price
$1,799.99
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200mm Anodized Aluminum Platen Heater for Semiconductor Processing
$1,799.99
Quantity: 1
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200mm Anodized Aluminum Platen Heater for Semiconductor Processing
$1,799.99
Quantity: 1
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The 200mm Anodized Aluminum Platen Heater is a reliable off-the-shelf solution designed for semiconductor processing applications. With features like quick stock delivery, world-class performance, and surface temperature uniformity of ±0.3%, this heater ensures precise wafer processing accuracy. It operates at temperatures up to 752°F and meets industry standards including MIL-A-8525 Type III Class 1. Ideal for prototype trials, this heater offers a cost-effective option with 'cast-in' reliability for long product life.
Product Specifications
Additional Information 0
This platen heater design is ideal for prototype machine trials or engineering experiments as well as temporary repairs until custom heaters can be manufactured. CAS platen heaters provide a complete turnkey solution and are available in anodized finish, or in bare machined aluminum 356 with optional add-on features. The stock anodized cast aluminum platen heaters are complete, ready to install parts and are available for shipment within one business day.Part is ultrasonic washed followed by IPA wipe down prior to packaging.
Applications 0
Semiconductor processing.Semiconductor research and development.
Features And Benefits 0
Stock deliveryWR200-2A ship within one business day to reduce down time.Assures a cost effective option for 200 and 300 mm wafer processing.World class performance"Cast-in" reliability assures long product life.Operating temperatures up to 752 ºF (400 ºC) for a wide range of process applications.Surface temperature uniformity of ±0.3% of set point assures wafer processing accuracy.
Specifications Angle
120 º
Specifications Cleaning
Ultrasonic wash followed by IPA wipe down
Specifications Delivery Time
6 to 8 weeks
Specifications Diameter
9 in | 228.6 mm
Specifications Hard Anodize Thickness
0.002 in | 0.05 mm
Specifications Heater Power At 208 V
1681 W
Specifications Heater Power At 240 V
2241 W
Specifications Heater Shape
Platen
Specifications Industry Standards
MIL-A-8525, Type III, Class 1
Specifications Lift Pin Hole Diameter
0.125 in | 3.2 mm
Specifications Material
Aluminum Alloy 356
Specifications Maximum Power
2241 W
Specifications Maximum Voltage
240 V
Specifications Number Of Lift Pin Hole
3X
Specifications Number Of Thermocouple Hole
1X
Specifications Perfect Circle Diameter
3.25 in | 82.55 mm
Specifications Surface Flatness
< 0.0005 in | 0.013 mm
Specifications Surface Temperature Uniformity
±0.3% of set point based on measurements at laboratory ambient conditions
Specifications Thermocouple Hole Diameter
0.066 in | 1.68 mm
Specifications Thermocouple Type
No Thermocouple Included
Specifications Thickness
1.25 in | 31.75 mm
Specifications Power
1681 W
Specifications Voltage
208 V