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300mm Anodized Platen Heater for Semiconductor Wafer Processing

300mm Anodized Platen Heater for Semiconductor Wafer Processing

SKU:200-2dece2

Efficient 300mm Anodized Platen Heater for semiconductor wafer processing.

Regular price $499.99
Regular price Sale price $499.99
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300mm Anodized Platen Heater for Semiconductor Wafer Processing

300mm Anodized Platen Heater for Semiconductor Wafer Processing

$499.99

Quantity: 1

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300mm Anodized Platen Heater for Semiconductor Wafer Processing

300mm Anodized Platen Heater for Semiconductor Wafer Processing

$499.99

Quantity: 1

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The 300mm Anodized Platen Heater offers a cost-effective solution for semiconductor processing, featuring a durable aluminum alloy 356 construction with precise surface flatness and uniform surface temperature. With a quick turnaround time and stock delivery, this heater ensures efficient 200 and 300 mm wafer processing while maintaining ±0.3% surface temperature uniformity. Ideal for prototype trials or temporary repairs, this heater's 'cast-in' reliability guarantees long-term performance. Operating at temperatures up to 752 ºF, it meets industry standards for wafer processing accuracy.

Product Specifications

Additional Information 0
This platen heater design is ideal for prototype machine trials or engineering experiments as well as temporary repairs until custom heaters can be manufactured. CAS platen heaters provide a complete turnkey solution and are available in anodized finish, or in bare machined aluminum 356 with optional add-on features. The stock anodized cast aluminum platen heaters are complete, ready to install parts and are available for shipment within one business day.Part is ultrasonic washed followed by IPA wipe down prior to packaging.
Applications 0
Semiconductor processing.Semiconductor research and development.
Features And Benefits 0
Stock deliveryAssures a cost effective option for 200 and 300 mm wafer processing.World class performance"Cast-in" reliability assures long product life.Operating temperatures up to 752 ºF (400 ºC) for a wide range of process applications.Surface temperature uniformity of ±0.3% of set point assures wafer processing accuracy.
Specifications Cleaning
Ultrasonic wash followed by IPA wipe down
Specifications Delivery Time
6 to 8 weeks
Specifications Heater Shape
Platen
Specifications Material
Aluminum Alloy 356
Specifications Surface Flatness
< 0.0005 in | 0.013 mm
Specifications Surface Temperature Uniformity
±0.3% of set point based on measurements at laboratory ambient conditions
Specifications Thermocouple Type
J, 6 in. (152 mm) Sheath + Fitting
Specifications Power
3350 W
Specifications Voltage
208 V