450mm Aluminum Pedestal Heater for Wafer Fabrication
450mm Aluminum Pedestal Heater for Wafer Fabrication
SKU:450-b8c37e
High-performance 450mm Aluminum Pedestal Heater for precise wafer heating in semiconductor applications.
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$3,499.99
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$3,499.99
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450mm Aluminum Pedestal Heater for Wafer Fabrication
$3,499.99
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450mm Aluminum Pedestal Heater for Wafer Fabrication
$3,499.99
Quantity: 1
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Designed for 450mm wafer fabrication, our Aluminum Pedestal Heater offers precision heating within vacuum chambers. Manufactured with Aluminum Alloy 356, it features electron beam welded construction, maximum power of 7000 Watts at 208 Volts, and an operating temperature range of 0 to 400 ºC. With superior temperature uniformity and customizable heating elements, this heater ensures reliable performance in semiconductor processing and research.
Product Specifications
Applications 0
Semiconductor processing.Semiconductor research and development.
Features And Benefits 0
Aluminum materialExcellent thermal characteristics and good compatibility with most process environments.Available with hardcoat anodize finish for better abrasion and corrosion resistance.Electron beam welded constructionIn-chamber heating solution for high vacuum.Two tubular heater elements "cast-in"Independently controllable inner and outer heater elements allow customized temperature profiles, thermocouple sensors are included.Precision machined partMeets industry standards for dimensional tolerances and surface finishes.World class performance"Cast-in" reliability assures long product life.Operating temperatures up to 400 ºC for a wide range of applications.Temperature uniformity of ±0.5% of set point based on initial FEA (finite element analysis).
Specifications Cleaning
Ultrasonic wash followed by IPA wipe
Specifications Material
Aluminum Alloy 356
Specifications Maximum Power
7000 Watts total at 208 Volts
Specifications Operating Temperature
0 to 400 ºC
Specifications Surface Flatness
0.013 mm | 0.0005 in
Temperature Uniformity 0
An initial Finite Element Analysis (FEA) optimization for temperature uniformity shows a predicted performance of better than ±0.5% of set point on the wafer as modeled in our vacuum chamber.