Greenray Industries TCXO 120MHz Crystal Oscillator
Greenray Industries TCXO 120MHz Crystal Oscillator
SKU:TCX-f13eb3
High-performance TCXO oscillator with wide frequency range and rugged design for reliable operation in harsh environments.
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$189.99
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$189.99
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Greenray Industries TCXO 120MHz Crystal Oscillator
$189.99
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Greenray Industries TCXO 120MHz Crystal Oscillator
$189.99
Quantity: 1
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The Greenray Industries TCXO 120MHz Crystal Oscillator is designed for high shock and vibration environments, offering exceptional performance with a wide frequency range from 2.5 to 120 MHz. This rugged and radiation-tolerant oscillator features superior phase noise performance, precise frequency stability, and low acceleration sensitivity, making it ideal for applications such as high orbit transponders, satellites, and RF telemetry systems. With MIL-PRF-55310 Level B screening and compliance with stringent standards, this TCXO ensures reliability and durability in demanding operational conditions.
Product Specifications
Applications Applications
High orbit transpondersLow orbit satellites (nano/micro satellites)RF telemetry systemsMultiband terminalUpconverter
Direct Current Dc Supply Direct Current Dc Supply Voltage
3.3 V | 5 V
Direct Current Dc Supply Maximum Direct Current Dc Supply Voltag
3.6 V | 5.25 V
Direct Current Dc Supply Maximum Supply Current At Complementary
35 mA
Direct Current Dc Supply Minimum Direct Current Dc Supply Voltag
3.0 V | 4.75 V
Direct Current Dc Supply Direct Current Dc Supply Voltag
3.3 V | 5.0 V
Electrical Characteristics Maximum Acceleration Sensitivity
0.07 ppb/g | 0.7 ppb/g
Electrical Characteristics Maximum Aging Tolerance For 10 Years
3 ppm
Electrical Characteristics Maximum Aging Tolerance For 1 Year
1 ppm
Electrical Characteristics Maximum Frequency Versus Voltage For
0.1 ppb/g
Electrical Characteristics Maximum Nominal Frequency At 25 Degre
120 MHz
Electrical Characteristics Minimum Nominal Frequency At 25 Degre
2.5 MHz
Electrical Characteristics Note For Expenditure Finance Committe
EFC = Supply to 0, Negative slope
Electrical Characteristics Frequency Stability At 0 To 5
0.3 ppm
Electrical Characteristics Frequency Stability At 20 To
1 ppm
Electrical Characteristics Frequency Stability At 40 To
3 ppm
Electrical Characteristics Frequency Stability At 55 To
5 ppm
Electrical Characteristics Short Term For A 1 Second Tau
0.08 ppb
Electrical Characteristics Voltage Control
10 ppm
Environmental Radiation
Method TIDDescription 200 krad (Si)Method SEL, SETDescription 100 MeV cm2/mg
Environmental Shock
StandardPer MIL-STD-883Method Condition2002, Cond BDescription1,500 g, 0.5 ms half-sine
Environmental Vibration
StandardPer MIL-STD-883Method, Condition2007, Cond ADescription50 g, 20 to 2,000 Hz, swept sine
Features Features
200 krad (Si) total ionizing doseRugged, hermetic, radiation tolerant 34.8 mm x 20.2 mm 24-PIN DIP packageSEL and SET free to 100 MeV cm2/mgUltra-low acceleration sensitivity < 0.07 ppb/gCMOS or Sinewave outputMIL-PRF-55310 Level B or S Screening
Phase Noise Performance Phase Noise At 20 Megahertz Mhz
-160 dBc/Hz
Radio Frequency Rf Output Sinewave Maximum Level 0 At 33 Volts V
0.2 V
Radio Frequency Rf Output Sinewave Maximum Level 0 At 50 Volts V
0.2 V
Radio Frequency Rf Output Sinewave Maximum Sinewave Harmonics
-26 dBc
Radio Frequency Rf Output Sinewave Maximum Symmetry At Complemen
60 %
Radio Frequency Rf Output Sinewave Minimum Level 1 At 33 Volts V
2.8 V
Radio Frequency Rf Output Sinewave Minimum Level 1 At 50 Volts V
4.5 V
Radio Frequency Rf Output Sinewave Minimum Symmetry At Complemen
40 %
Radio Frequency Rf Output Sinewave Load At Complementary
15 pF
Radio Frequency Rf Output Sinewave Sinewave Output Power
3.0 dBM