Greenray TCXO 52MHz High Stability Crystal Oscillator
Greenray TCXO 52MHz High Stability Crystal Oscillator
SKU:TCX-9b9a3b
Reliable TCXO 52MHz Crystal Oscillator with ±1ppm stability, ideal for telecommunications and high-shock electronics.
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$199.99
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Greenray TCXO 52MHz High Stability Crystal Oscillator
$199.99
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Greenray TCXO 52MHz High Stability Crystal Oscillator
$199.99
Quantity: 1
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The Greenray TCXO 52MHz Crystal Oscillator is a reliable reference oscillator designed for precise timing in demanding applications. With a wide temperature range of -55 to +125°C, this TCXO offers exceptional stability of ±1ppm over a rugged CMOS or Clipped Sine output. It complies with MIL-STD-202G for vibration and shock resistance, making it ideal for telecommunications, high-shock electronics, and airborne communication systems.
Product Specifications
Applications Applications
Telecommunications High-shock electronics Mobile radio Mobile instrumentation Airborne communications Wireless communications Microwave receivers
Benefits Benefits
A high performance reference source for timing applications that require low power draw, tight stability over a wide temperature range and a rugged, compact package.
Direct Current Dc Supply Maximum Direct Current Dc At Clipped Si
3 mA
Direct Current Dc Supply Maximum Direct Current Dc At Complement
6 mA
Direct Current Dc Supply Maximum Direct Current Dc Supply Voltag
3.6 V
Direct Current Dc Supply Minimum Direct Current Dc Supply Voltag
3.0 V
Direct Current Dc Supply Direct Current Dc Supply Voltag
3.3 V
Electrical Characteristics Maximum Acceleration Sensitivity
3 x10-10/g | 5 x10-10/g
Electrical Characteristics Maximum Aging Tolerance For 10 Years
4.0 ppm
Electrical Characteristics Maximum Aging Tolerance For 1 Year
1.0 ppm
Electrical Characteristics Maximum Frequency Versus Load Voltage
0.1 ppm
Electrical Characteristics Maximum Frequency Versus Reflow After
1.0 ppm
Electrical Characteristics Maximum Frequency Versus Voltage At 5
0.2 ppm
Electrical Characteristics Maximum Nominal Frequency At 25 Degre
52 MHz
Electrical Characteristics Maximum Start Up Time
16 ms
Electrical Characteristics Minimum Nominal Frequency At 25 Degre
10 MHz
Electrical Characteristics Acceleration Sensitivity
0.2 x10-10/g | 0.4 x10-10/g
Electrical Characteristics Frequency Stability At 45 To
0.5 ppm
Electrical Characteristics Frequency Stability At 55 To
1.0 ppm
Electrical Characteristics Start Up Time
10 ms
Electrical Characteristics Voltage Control
8.0 ppm
Environmental Shock
Standard MIL-STD-202GMethod, Condition213, I,Description 100 g, 11 ms, half-sine
Environmental Vibration
Standard MIL-STD-202GMethod, Condition204, CDescription20 g, 20 Hz to 2000 Hz, swept sine
Features Features
Tight temperature stability of ± 1 ppm over -55 ºC to +125 ºC CMOS or Clipped Sine outputExcellent long-term aging < 4 ppm over 10 years Low acceleration sensitivity < 3x10-10/g Low power consumption
Phase Noise Performance Phase Noise At 20 Megahertz Mhz
-149 dBc/Hz
Phase Noise Performance Phase Noise Static At 20 Megaher
-150 dBc/Hz
Radio Frequency Rf Output Sinewave Maximum Level At 33 Volt V Su
20 % "0" Level
Radio Frequency Rf Output Sinewave Maximum Sub Harmonics Voltage
3.0 Vpp
Radio Frequency Rf Output Sinewave Maximum Symmetry Of Metal Oxi
60 %
Radio Frequency Rf Output Sinewave Minimum Level At 33 Volt V Su
80 % "1" Level
Radio Frequency Rf Output Sinewave Minimum Sub Harmonics Voltage
0.8 Vpp
Radio Frequency Rf Output Sinewave Minimum Symmetry Of Metal Oxi
40 %
Radio Frequency Rf Output Sinewave Load
15 pF
Radio Frequency Rf Output Sinewave Load At 10 Kiloohm Ko
10 pF
Radio Frequency Rf Output Sinewave Sub Harmonics Voltage
1.9 Vpp