High-Performance TCXO Crystal Oscillator 10-50MHz
High-Performance TCXO Crystal Oscillator 10-50MHz
SKU:TCX-7e41b1
Experience precision and reliability with our TCXO 10-50MHz Crystal Oscillator - ideal for critical timing in mobile and wireless applications.
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$129.99
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$129.99
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High-Performance TCXO Crystal Oscillator 10-50MHz
$129.99
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High-Performance TCXO Crystal Oscillator 10-50MHz
$129.99
Quantity: 1
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The TCXO 10 to 50 Megahertz Frequency Temperature-Compensated Crystal Oscillator from Greenray Industries offers unparalleled precision and reliability for critical timing applications. Designed for mobile and battery-powered devices, this TCXO features a compact 7.0 x 5.0 mm package that can withstand high shock up to 50,000 g. With tight temperature stability as low as ±0.1ppm, low power consumption, and excellent long-term aging characteristics, this oscillator ensures optimal performance in telecommunications, mobile radio, and wireless communications applications.
Product Specifications
Applications Applications
TelecommunicationsHigh-shock electronicsMobile radioMobile instrumentationAirborne communicationsWireless communicationsMicrowave receiversSmart munitions
Direct Current Dc Supply Maximum Direct Current Dc Supply Voltag
3.6 V | 5.25 V
Direct Current Dc Supply Maximum Input Current For Clipped Sinew
3 mA
Direct Current Dc Supply Maximum Input Current For Metal Oxide S
6 mA
Direct Current Dc Supply Minimum Direct Current Dc Supply Voltag
3.0 V | 4.75 V
Direct Current Dc Supply Direct Current Dc Supply Voltag
3.3 V | 5.0 V
Electrical Characteristics Maximum Acceleration Sensitivity
2.5 ppb/g | 7 ppb/g
Electrical Characteristics Maximum Aging Per Year At 10 Megahert
±1 ppm
Electrical Characteristics Maximum Frequency Versus Reflow After
1 ppm
Electrical Characteristics Maximum Nominal Frequency At 25 Degre
50 MHz
Electrical Characteristics Minimum Nominal Frequency At 25 Degre
10 MHz
Electrical Characteristics Note For Electronic Frequency
EFC = 0 to VDD Positive slope
Electrical Characteristics Aging Per Year At 10 Megahert
±0.5 ppm
Electrical Characteristics Electronic Frequency Control
7 ppm
Electrical Characteristics Frequency Stability At 10 To
0.1 ppm
Electrical Characteristics Frequency Stability At 20 To
0.1 ppm
Electrical Characteristics Frequency Stability At 40 To
0.3 ppm
Electrical Characteristics Frequency Stability At 55 To
1.0 ppm
Environmental Shock
ConditionsMIL-STD-202GMethod213, INotes100 g, 5 ms, Sawtooth Shock available up to 50,000 g
Environmental Vibration
ConditionsMIL-STD-202GMethod214A, I-FNotes0.3 PSD, 20.71 g RMS
Features Features
Small and rugged 7.0 x 5.0 mm packageWithstand vibration, and high shock up to 50,000 gTight temperature stability as low as ±0.1ppmExcellent long-term aging < 5ppm over 10 yearsLow acceleration sensitivity: < 0.7 ppb/gLow power consumption, enable reliable, battery-operated performance gainsLow phase noise
Radio Frequency Rf Output Sinewave Maximum Level At 33 Volt V Su
+ 0.2 V "0" Level
Radio Frequency Rf Output Sinewave Maximum Level At 50 Volt V Su
+ 0.2 V "0" Level
Radio Frequency Rf Output Sinewave Maximum Symmetry
60 %
Radio Frequency Rf Output Sinewave Minimum Level
+0.8 Vpp
Radio Frequency Rf Output Sinewave Minimum Level At 33 Volt V Su
+ 2.8 V "1" Level
Radio Frequency Rf Output Sinewave Minimum Level At 50 Volt V Su
+ 4.2 V "1" Level
Radio Frequency Rf Output Sinewave Minimum Symmetry
40 %
Radio Frequency Rf Output Sinewave Load
15 pF
Radio Frequency Rf Output Sinewave Load At 10 Kiloohm Ko
10 pF
Radio Frequency Rf Output Sinewave Symmetry
50 %