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High-Performing TCXO 10-52MHz Crystal Oscillator

High-Performing TCXO 10-52MHz Crystal Oscillator

SKU:TCX-4b660f

Enhance precision timing with our TCXO 10-52MHz Crystal Oscillator. Reliable, stable performance for critical applications.

Regular price $89.99
Regular price Sale price $89.99
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High-Performing TCXO 10-52MHz Crystal Oscillator

High-Performing TCXO 10-52MHz Crystal Oscillator

$89.99

Quantity: 1

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High-Performing TCXO 10-52MHz Crystal Oscillator

High-Performing TCXO 10-52MHz Crystal Oscillator

$89.99

Quantity: 1

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The TCXO 10 to 52 Megahertz (MHz) Frequency Temperature-Compensated Crystal Oscillator from Greenray Industries is a top-of-the-line reference oscillator designed for precision timing applications. This compact oscillator boasts low noise, minimal power consumption, and exceptional stability over a wide temperature range. With typical frequency stability ranging from 0.1 ppm to 1.0 ppm across various temperatures, this TCXO ensures reliable performance in demanding environments. Additionally, it features a rugged construction that can withstand high shock and vibration levels, making it ideal for telecommunications, military, and aerospace applications.

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Product Specifications

Applications Applications
TelecommunicationsHigh-shock electronicsMobile radioMobile instrumentationAirborne communicationsWireless communicationsMicrowave receivers
Direct Current Dc Supply Maximum Direct Current Dc Supply Voltag
3.15 V | 3.6 V | 5.25 V
Direct Current Dc Supply Maximum Input Current For Clipped Sinew
3 mA
Direct Current Dc Supply Maximum Input Current For Metal Oxide S
6 mA
Direct Current Dc Supply Minimum Direct Current Dc Supply Voltag
2.85 V | 3.0 V | 4.75 V
Direct Current Dc Supply Direct Current Dc Supply Voltag
3.0 V | 3.3 V | 5.0 V
Electrical Characteristics Maximum Acceleration Sensitivity
0.7 ppb/g | 2 ppb/g
Electrical Characteristics Maximum Aging Per Year
±3 ppm
Electrical Characteristics Maximum Frequency Versus Reflow After
1 ppm
Electrical Characteristics Maximum Nominal Frequency At 25 Degre
52 MHz
Electrical Characteristics Minimum Nominal Frequency At 25 Degre
10 MHz
Electrical Characteristics Note For Electronic Frequency
EFC = 0 to VDD Positive slope
Electrical Characteristics Aging Per Year
±1 ppm
Electrical Characteristics Electronic Frequency Control
8 ppm
Electrical Characteristics Frequency Stability At 20 To
0.1 ppm
Electrical Characteristics Frequency Stability At 40 To
0.5 ppm | 1.0 ppm
Environmental Shock
Per MIL-STD-202G, Method 213, Condition D
Environmental Vibration
Per MIL-STD-202G, Method 214, Condition I-F
Features Features
Small and rugged 5.0 x 3.2 mm packageWithstand vibration, and high shock up to 30,000 gTight temperature stability of ± 0.1 ppm over -20 to +70 ºCExcellent long-term aging < 5 ppm over 10 yearsLow acceleration sensitivity < 0.7 ppb/gLow power consumption, as low as 2mA, enable reliable, battery-operated performance gain.Low phase noise
Radio Frequency Rf Output Sinewave Maximum Level At 33 Volt V Su
+ 0.2 V "0" Level
Radio Frequency Rf Output Sinewave Maximum Level At 50 Volt V Su
+ 0.2 V "0" Level
Radio Frequency Rf Output Sinewave Maximum Symmetry
60 %
Radio Frequency Rf Output Sinewave Minimum Level
+0.8 Vpp
Radio Frequency Rf Output Sinewave Minimum Level At 33 Volt V Su
+ 2.8 V "1" Level
Radio Frequency Rf Output Sinewave Minimum Level At 50 Volt V Su
+ 4.2 V "1" Level
Radio Frequency Rf Output Sinewave Minimum Symmetry
40 %
Radio Frequency Rf Output Sinewave Load
15 pF
Radio Frequency Rf Output Sinewave Load At 10 Kiloohm Ko
10 pF
Radio Frequency Rf Output Sinewave Symmetry
50 %
Specifications Industry Standards
RoHS (Restriction of Hazardous Substances) Compliant
Specifications Maximum Frequency
52 MHz
Specifications Minimum Frequency
10 MHz