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High-Purity 20mm Diameter Silicon Rod

High-Purity 20mm Diameter Silicon Rod

SKU:SIL-0b0b02

High-Purity 20mm Silicon Rod: 99.999% purity, diamond crystal structure, precise tolerances. Ideal for semiconductor applications.

Regular price $89.99
Regular price Sale price $89.99
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High-Purity 20mm Diameter Silicon Rod

High-Purity 20mm Diameter Silicon Rod

$89.99

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High-Purity 20mm Diameter Silicon Rod

High-Purity 20mm Diameter Silicon Rod

$89.99

Quantity: 1

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The High-Purity 20mm Diameter Silicon Rod from Goodfellow Corp. offers exceptional purity at 99.999%. With a diamond crystal structure, this single crystal silicon rod is perfect for semiconductor applications requiring high-quality material. Its precise diameter and length tolerances make it ideal for exacting industrial and research needs. Resistant to various elements and with excellent electrical and thermal properties, this rod is a versatile choice for institutions seeking reliable silicon material.

Product Specifications

Atomic Properties Atomic Number
14
Atomic Properties Atomic Radius Goldschmidt
0 nm
Atomic Properties Atomic Weight
28.08550 amu
Atomic Properties Crystal Structure
Diamond
Atomic Properties Electronic Structure
Ne3s²3p²
Atomic Properties Ionization Potential Number
1 | 2 | 3 | 4 | 5 | 6
Atomic Properties Ionization Potential Number 1
8.15 eV
Atomic Properties Ionization Potential Number 2
16.3 eV
Atomic Properties Ionization Potential Number 3
33.5 eV
Atomic Properties Ionization Potential Number 4
45.1 eV
Atomic Properties Ionization Potential Number 5
167 eV
Atomic Properties Ionization Potential Number 6
205 eV
Atomic Properties Natural Isotope Distribution Mass Number
28 | 29 | 30
Atomic Properties Natural Isotope Distribution Mass Number 28
92.23 %
Atomic Properties Natural Isotope Distribution Mass Number 29
4.67 %
Atomic Properties Natural Isotope Distribution Mass Number 30
3.10 %
Atomic Properties Photo Electric Work Function
4.20 eV
Atomic Properties Thermal Neutron Absorption Cross Section
0.1600 Barns
Atomic Properties Valences Shown
4
Electrical Properties Electrical Resistivity At 20 Degree Celsiu
23 x 1010 µΩ·cm
Electrical Properties Thermal Emf Against Pt Cold 0 Degree Celsi
-41.56 mV
Material Material
SiliconSilicon was discovered in 1824 by J.J. Berzelius in Stockholm, Sweden. After carbon, silicon is the most abundant element on earth, the abundance being 277,000 ppm. It is generally present as a silicate, these being found in many rocks, clays and soils. Silicon is obtained by reducing silica (sand, SiO₂), with carbon. Further purification of the element for applications requiring high purity material (e.g. semi conductor devices) is achieved by zone refining, the resulting purity being better than 1:10⁹. Silicon exists in two allotropic forms; brown silicon is a powder, whereas crystalline (metallic) silicon is grey and it is the latter which is more widely used. Bulk silicon is unreactive towards oxygen, water, acids (excluding HF), but is soluble in hot alkalis. Silicon has many applications in various industries; for example, ultra high purity silicon is used in the semiconductor industry as a result of its semiconducting properties. Silicon is also used as an alloying element in the manufacture of certain alloys (e.g. ferrosilicon, an alloy of iron and silicon which is used to introduce silicon into steel and cast iron). It is also used in the manufacture of glass.
Mechanical Properties Bulk Modulus Polycrystalline
100.0 GPa
Mechanical Properties Hardness Mohs Polycrystalline
7.00
Mechanical Properties Material Condition
Polycrystalline
Mechanical Properties Poissons Ratio Polycrystalline
0.420
Mechanical Properties Tensile Modulus Polycrystalline
113.00 GPa
Physical Properties Boiling Point
2355 ºC
Physical Properties Density
2.340 g·cm-3
Specifications Diameter
20 mm
Specifications Form
Rod
Specifications Length
50 to 100 mm
Specifications Orientation
111
Specifications Purity
99.999 %
Thermal Properties Coefficient Of Thermal Expansion At 0 To 100
4.700 to 7.600 x10-6 K-1
Thermal Properties Latent Heat Of Evaporation
13700 Jg-1
Thermal Properties Latent Heat Of Fusion
1650.00 Jg-1
Tolerances Tolerance For 10 Millimeter Mm Diameter
5 %