High Purity Terbium Sputtering Targets - Goodfellow Corp.
High Purity Terbium Sputtering Targets - Goodfellow Corp.
SKU:TER-50c154
Enhance sputtering efficiency with High Purity Terbium Sputtering Targets - 99.0% purity, tailored for precision and reliability.
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$299.99
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High Purity Terbium Sputtering Targets - Goodfellow Corp.
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High Purity Terbium Sputtering Targets - Goodfellow Corp.
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Elevate your sputtering processes with our Terbium (Tb) Sputtering Targets, boasting 99.0% purity. Specially crafted for precision ion bombardment, these 1mm thick targets, with a diameter ranging from 50 to 75mm, ensure consistent performance. Terbium, a lanthanide metal, is known for its malleability and thermal conductivity, making it a preferred choice for semiconductor applications. Made-to-order with a 4-5 week delivery timeline, unleash the potential of terbium in your research or manufacturing endeavors.
Product Specifications
Atomic Properties Atomic Number
65
Atomic Properties Atomic Radius Goldschmidt
0 nm
Atomic Properties Atomic Weight
158.92540 amu
Atomic Properties Crystal Structure
Hexagonal Close Packed
Atomic Properties Electronic Structure
Xe4f96s2
Atomic Properties Ionization Potential Number
1 | 2
Atomic Properties Ionization Potential Number 1
5.85 eV
Atomic Properties Ionization Potential Number 2
11.52 eV
Atomic Properties Photo Electric Work Function
3.00 eV
Atomic Properties Thermal Neutron Absorption Cross Section
30.0000 Barns
Atomic Properties Valences Shown
3 | 4
Electrical Properties Electrical Resistivity At 20 Degree Celsiu
116 µΩ·cm
Material Material
TerbiumTerbium was discovered in 1843 by C.G. Mosander in Stockholm and was named after the Swedish town of Ytterby. A lanthanide group metal, it is soft, malleable and ductile. Terbium has an abundance of 1.1 ppm in the earth's crust and is found in minerals in combination with other lanthanide group elements. It is slowly oxidised in air, the rate of the reaction being increased if terbium powder is used. Terbium reacts slowly with cold water. Terbium is used in the semiconductor industry as a dopant.
Mechanical Properties Bulk Modulus Polycrystalline
40.8 GPa
Mechanical Properties Hardness Vickers Polycrystalline
60 Kgf mm-2
Mechanical Properties Material Condition
Polycrystalline
Mechanical Properties Poissons Ratio Polycrystalline
0.265
Mechanical Properties Tensile Modulus Polycrystalline
57.50 GPa
Note Note
Made to order for delivery in about 4-5 weeks. Other sizes also available.
Physical Properties Boiling Point
3123 ºC
Physical Properties Density At 20 Degree Celsius C Temperature
8.272 g·cm-3
Specifications Diameter
50 to 75 mm
Specifications Purity
99.0 %
Specifications Thickness
1 mm
Thermal Properties Coefficient Of Thermal Expansion At 0 To 100
7.000 x10-6 K-1
Thermal Properties Latent Heat Of Evaporation
1840 Jg-1
Thermal Properties Latent Heat Of Fusion
103.00 Jg-1
Thermal Properties Melting Point
1356.00 ºC
Thermal Properties Specific Heat At 25 Degree Celsius C Temperat
183.0 J K-1 kg-1
Thermal Properties Thermal Conductivity At 0 To 100 Degree Celsi
11.10 W m-1K-1
Tolerances Disc Diameter Tolerance
0.5 mm
Tolerances Thickness Tolerance
0.5 mm
Type Type
MetalA metal is generally considered to be a pure element which readily forms cations. Metals are characterized by their opacity and high thermal and electrical conductivities, the latter properties resulting from the delocalized and mobile nature of the electrons over the crystal structure.